- #1
PhilQ
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If we have a MIM device of Ti/Nb2O5/Ti at room temperature (300K), with a measured barrier height(s) of 0.0eV, the insulator thickness is say 2nm, and let's call the electron affinity of Nb2O5 4eV, and the Work function of Ti 4eV (for the sake of a simplified question), what is the average / typical energies of electrons that tunnel through the insulator?
I am guessing there will be some wildly different answers.
I am guessing there will be some wildly different answers.
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