Room temperature positive magnetoresistance

In summary, the conversation discusses achieving positive magnetoresistance (MR) in CNT composite thin films by adding a small percentage of Fe. The addition of Fe injects spin polarized electrons into the CNT, causing resistance to increase with magnetic field. However, this also leads to an increase in current and a decrease in resistance. The question is posed as to whether magnetostriction of Fe in the CNTs could be affecting the resistivity, but it is determined that this is negligible. The positive MR was only achieved with the addition of Fe, ruling out weak antilocalization effects in carbon. It is noted that the positive MR was observed with varying concentrations of CNT and Fe, indicating that the reason for this phenomenon is
  • #1
rejinisaac1
11
0
I've achieved positive magnetoresistance (MR) in CNT composite thin films with a small percentage of Fe in it. Fe injects spin polarized electrons into CNT. But +ve MR means that resistance is increasing with magnetic field. But due to injection of spin polarized electrons the current has to increase and hence the resistance has to go down. Is my view right? If yes, what could be the factor that is leading to the increase in resistance? experiments were done in a range of 0 to 1.1 tesla. Please help me
 
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  • #2
Could magnetostriction of the Fe in your CNTs be affecting the resistivity?
 
  • #3
magnetostriction in Fe is negligible...MR is increasing with increase in CNT
 
  • #4
You achieved positive MR only after Fe was added, so it's not a weak antilocalization effect in carbon?

EDIT: Probably not due to room temperature...
 
Last edited:
  • #5
positive MR was achieved with Fe. no MR was observed in case of just CNTs. positive MR was observed when CNT concentration was fixed and Fe increased and also when Fe concentration was fixed and CNT increased. what could be the reason??
 

Related to Room temperature positive magnetoresistance

1. What is room temperature positive magnetoresistance?

Room temperature positive magnetoresistance is a phenomenon in which the resistance of a material decreases when exposed to a magnetic field at room temperature. This means that the material becomes more conductive in the presence of a magnetic field.

2. How is room temperature positive magnetoresistance measured?

Room temperature positive magnetoresistance is typically measured by applying a magnetic field to a sample of the material and measuring the change in resistance. This can be done using various techniques such as four-point probe measurements or Hall effect measurements.

3. What causes room temperature positive magnetoresistance?

The exact cause of room temperature positive magnetoresistance is still not fully understood. However, it is believed to be a result of the spin-dependent scattering of electrons in the material, which is influenced by the presence of a magnetic field.

4. What are the applications of room temperature positive magnetoresistance?

Room temperature positive magnetoresistance has potential applications in various fields such as data storage, spintronics, and sensors. It can also be used in the development of more efficient electronic devices and technologies.

5. Are there any limitations to room temperature positive magnetoresistance?

One limitation of room temperature positive magnetoresistance is that it is typically only observed in certain materials, such as semiconductors and magnetic thin films. Additionally, the magnitude of the effect is often small, which can make it difficult to measure accurately.

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