Relation spin hall and inverse spin hall

In summary: Therefore, it is not accurate to say that a high spin Hall conductivity always leads to a low ISHE efficiency. In summary, a high spin Hall conductivity does not necessarily result in a low ISHE efficiency and other factors must also be considered when measuring the ISHE.
  • #1
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I have a basic question about the spin hall effect and the inverse spin hall effect (SHE):

Let's take a material like Pt, which has a high SHE. Typically the spin hall conductivity (spin current over electric field) = 300 ohm^-1 cm^-1. However, it is also used for measurements using the inverse effect (ISHE). However, when using the ISHE effect a high spin hall conductivity is not beneficial, because the resulting electric field will scale with the reciprocal of the spin hall conductivity. So I would conclude that a high SHE would automatically result in a low ISHE "efficiency". Or am I using these equations wrong?
 
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  • #2
The answer to your question is that a high spin Hall conductivity does not automatically result in a low ISHE efficiency. The efficiency of the ISHE depends on many factors, including the material properties and the geometry of the device. The spin Hall conductivity is an important factor, but it is not the only one. A high spin Hall conductivity does result in a larger spin current, which can then produce a larger electric field when measured using the ISHE. However, this electric field is also affected by other factors such as the device geometry and the materials used.
 

Related to Relation spin hall and inverse spin hall

1. What is the relation between spin hall and inverse spin hall?

The spin hall effect is a phenomenon in which an applied electric field causes electrons to spin and creates a transverse spin current. The inverse spin hall effect is the opposite, where a spin current induces an electric field. In other words, the spin hall effect converts an electric field into a spin current, while the inverse spin hall effect converts a spin current into an electric field.

2. How do spin hall and inverse spin hall affect electronic devices?

The spin hall and inverse spin hall effects are relevant for understanding and controlling spin currents in electronic devices. They can be used to manipulate the spin of electrons, which is important for technologies such as spintronics and quantum computing.

3. What causes the spin hall and inverse spin hall effects?

The spin hall effect is caused by the spin-orbit coupling in a material, which arises due to the interaction between the electrons' spin and their orbital motion. The inverse spin hall effect is caused by the inverse spin-orbit coupling, where the presence of a spin current creates an electric field.

4. How are spin hall and inverse spin hall measured?

The spin hall effect can be measured by applying an electric field and measuring the resulting spin current. The inverse spin hall effect can be measured by applying a spin current and measuring the resulting electric field. These measurements can be done using various techniques, such as spin-polarized transport measurements or optical methods.

5. Are there any real-world applications of spin hall and inverse spin hall effects?

Yes, there are several potential applications of spin hall and inverse spin hall effects in electronic devices. These include spin-based transistors, data storage devices, and spin-based logic gates. The ability to control and manipulate spin currents also has implications for quantum computing and spin-based sensors.

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