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Homework Statement
Calculate the expected peak wavelength and spectral bandwidth (in units of wavelength) of the
emission for both a GaAs and silicon LED at liquid nitrogen temperature (77 K) and room temperature (300 K). Which of these cases would you expect to result in the best emitter and why?
Homework Equations
λg = hc/Eg
λg: maximum wavelength
λg [μm] = 1.24/Eg
Spectral bandwidth = (1.8kbT) / ħ
The Attempt at a Solution
λg: band gap represents minimum energy, or maximum wavelength for which an electron-hole pair can be excited
GaAs Eg: 1.43 eV
Si Eg: 1.14 eV
λg [μm] = 1.24/1.43 = 0.867 μm (maximum wavelength for GaAs)
λg [μm] = 1.24/1.14 = 1.088 μm (maximum wavelength for Si)
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Spectral bandwidth = (1.8kb*300k) / ħ = 3.928*1013Hz
Expressing this in units of wavelength, I've used the relation between frequency and wavelength:
λ=c/f = c / 3.928*1013Hz
=7.6*10-6m
Spectral bandwidth = (1.8kb*77k) / ħ = 1.008*1013Hz = 2.9*10-5m/s
Expressing this in units of wavelength, I've used the relation between frequency and wavelength:
λ=c/f = c / 1.008*1013Hz
= 2.9*10-5m
So I think I've got the correct peak wavelength and spectral bandwidth, I'm not sure about the last question though or how I can quantify if one is a better emitter than the other. Any help would be much appreciated!