I have a question about MOS C-V Characteristic.

In summary, a MOS C-V characteristic is the capacitance-voltage curve of a MOS device, which shows the relationship between voltage and capacitance. It is measured by applying AC voltage and using specialized equipment. This characteristic can provide information about doping concentration, oxide layer quality, and the presence of defects. The shape of the curve can be affected by various factors such as dopants, oxide layer thickness, and gate electrode material. MOS C-V characteristics are commonly used in semiconductor device characterization to evaluate electrical properties, fabrication processes, and the effects of aging.
  • #1
empkth
4
0
Hello, All Outstanding electrical engineering student, I have a some question.

As posted,

1. At low frequency, the inversion electrons will be able to respond to the ac voltage
=> CG (ω= 0) = Cox (Why?).

2. At high frequency, inversion electrons are not able to respond to ac voltage
=> CG (ω=∞) = Cox Cs / (Cox + CS) =Cmin (Why?)

Please.. answer logical comments. I'm so curiosity because of these matters.
 

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  • #2
Sounds like a homework problem. According to PF rules, you need to make an attempt to solve the problem before we can help. Can you tell us your thoughts on the answers?
 

Related to I have a question about MOS C-V Characteristic.

1. What is a MOS C-V characteristic?

A MOS C-V characteristic refers to the capacitance-voltage curve of a metal-oxide-semiconductor (MOS) device. It shows the relationship between the voltage applied to the MOS device and the resulting capacitance.

2. How is a MOS C-V characteristic measured?

A MOS C-V characteristic is measured by applying a small AC voltage to the MOS device and measuring the resulting capacitance using specialized equipment such as a semiconductor parameter analyzer.

3. What information can be obtained from a MOS C-V characteristic?

A MOS C-V characteristic can provide information about the doping concentration, thickness, and interface quality of the oxide layer in a MOS device. It can also reveal the presence of any defects or impurities in the device.

4. What factors can affect the shape of a MOS C-V characteristic?

The shape of a MOS C-V characteristic can be influenced by the type and concentration of dopants in the semiconductor substrate, the thickness and quality of the oxide layer, and the type of metal used for the gate electrode.

5. How is a MOS C-V characteristic used in semiconductor device characterization?

MOS C-V characteristics are used to determine the electrical properties and quality of MOS devices. They can also be used to evaluate the performance of different fabrication processes and monitor the effects of aging on MOS devices.

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