Hopping Probabilities in Tight Binding Model

In summary: The sign of the t's will be determined by the sign of the overlapp integrals and this is often not arbitrary.
  • #1
R Van Camp
8
0
We recently covered the tight binding model. I have a question from an early lecture regarding sign conventions for the hopping parameter t(T). It was explained that t>0 due to MO theory. I agree and understand why; orbital overlap. It was then stated that tnn<0; that is, tnn=-t.

I am not following why tnn<0. It makes some sense that this is true in view of the increase in charge delocalization associated with any mode of hopping. Ultimately, I am looking to understand the physical significance of the sign of tnn, tnnn, etc.
 
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  • #2
What is t_nn?
 
  • #3
The subscript 'nn' indicates nearest neighbor hopping; 'nnn' next nearest neighbor hopping. We use Kittel but the lectures on the Tight Binding Model came from Ashcroft's text. Distinctions in notation exist between the two texts. I think Ashcroft was used for this subject but it is a more thorough text.
 
  • #4
Well, the sign can be chosen at will to a certain extent. E.g. if you take two 1s orbitals in the hydrogen molecule as a basis, you can change the sign of the off diagonal element (but not of the diagonal element) by changing the sign of one of the two basis functions.
For equal atoms, this is probably not a problem and probably also not for different atoms, e.g. you could fix that e.g. the lobe of a p_x orbital pointing in +x direction should always be positive.
Having said this, there are some semi-empirical rules which are often used to express the t's in terms of the overlapp integrals. See. e.g.:
http://en.wikipedia.org/wiki/Extended_Huckel_method

Nevertheless, even for some canonical choice of the basis functions, the overlapp integrals (and t) may be either positive or negative. For two hydrogen 1s orbitals it will be positive, while for two p_x orbitals it will be negative with the above convention when the two atoms are both on the x-axis ( forming a sigma bond then) and positive if they are both on the y-axis forming a pi bond then).
 

Related to Hopping Probabilities in Tight Binding Model

1. What is the tight binding model?

The tight binding model is a mathematical model used to describe the electronic structure of a crystal. It assumes that the electrons are confined to a lattice of atoms and that their motion is governed by the overlap of atomic orbitals.

2. How are hopping probabilities calculated in the tight binding model?

Hopping probabilities in the tight binding model are calculated using the Slater-Koster parameters, which describe the overlap between atomic orbitals of neighboring atoms. These parameters take into account the distances and orientations between the atoms in the crystal lattice.

3. What factors affect hopping probabilities in the tight binding model?

The hopping probabilities in the tight binding model are affected by the distance between atoms, the orientation of the atomic orbitals, and the energy difference between the two orbitals. Additionally, the strength of the overlap between the orbitals also plays a role in determining the hopping probabilities.

4. How do hopping probabilities impact the electronic properties of a material?

Hopping probabilities determine the mobility of electrons in a material, which in turn affects its electrical conductivity. Materials with high hopping probabilities have more mobile electrons and therefore exhibit better electrical conductivity.

5. Can the tight binding model accurately predict the electronic properties of all materials?

No, the tight binding model is a simplified model and may not accurately predict the electronic properties of all materials. It is most useful for describing the electronic properties of simple crystalline materials with well-defined crystal structures.

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