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JasonW
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Homework Statement
Consider a 1D sample, such that for x < xb the semiconductor has a dielectric constant [tex]\varepsilon_{1}[/tex], and for x > xb has a dielectric constant [tex]\varepsilon_{2}[/tex]. At the interface between the two semiconductor matierials (x = xb) there are no interface charges. Starting from the condition
[tex]\varepsilon_{1}\frac{\partial\psi}{\partial x}\mid_{x=xb} = \varepsilon_{2}\frac{\partial\psi}{\partial x}\mid_{x=xb}[/tex]
and using Taylor series expansion for [tex]\varepsilon[/tex] around x = xb (for x < xb and x > xb), calculate the finite difference approximation of the Poisson equation at x = xb.
Homework Equations
Poisson Equation (In the form I think matters for the above problem)
[tex]\nabla^2\phi = -\frac{\rho}{\varepsilon}[/tex]
The Attempt at a Solution
First let me start off that I haven't been in school for nearly 20 years and I'm very rusty with math. I think there are two boundary conditions to this problem, the newmann boundary is the [tex]\varepsilon_{1}\frac{\partial\psi}{\partial x}\mid_{x=xb} = \varepsilon_{2}\frac{\partial\psi}{\partial x}\mid_{x=xb}[/tex] and a dirichlet boundary at [tex]\rho = 0[/tex] when x=xb.
Now for the finite difference approximation I get
[tex]\frac{d}{dx}\psi(x) = \frac{\psi(x + \Delta x) - \psi(x - \Delta x)}{2\Delta x}[/tex]
[tex]\frac{d^2}{dx^2}\psi(x) = \frac{\psi(x + \Delta x) - 2\psi(x) + \psi(x - \Delta x)}{2\Delta x^2}[/tex]
Now I am planning on generating an Ax=b matrix but I'm not sure how to apply the neumann boundary.
Any suggestions?
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