Thank you for your reply.
Using the Hot plate was only for test purposes. For the the long term i would move to a RTA tool as you suggested.
Lets say the process is carried out in an RTA und N2 atmosphere , what effect does a longer annealing tme ( ~ 60 min ) have on the metal layers ? Why is...
Hello to all the experts out there!: )
I have encountered a problem on my samples after Post deposition annealing [ Please refer to the crossectional SEM picture - B below].
Sample description : Thinfilm metal stack [ Pd/Ti/Pd/Au] deposited onto GaAs substrate using PVD
Post deposition...
Thank you, This suggestion along with heating the chamber walls with a hot blowdryer (industry grade) prior to chamber evacuation helped.
We have no Leaks.
Hello all ,
our PVD chamber experienced a water leakage from the cruible revoler area and unfortunately we are no longer able to achieve a stable Base pressure ( ~10e-6 mbar)
We do not have the option of a bake out. Is there any other way to get rid of water in the chamber ?
Ofcourse the water...
Hello Material experts out there !
I would like to test a reduced deposition rate for Ni ( 0.3 nm/sec reduced to 0.1 nm/sec) to avoid metal splashes and stabilize the process. This would for sure increase the deposition process time but I'm not quite sure of the Microscopic effects of such a...
Hello PVD experts out there !
I have question on general e-PVD Vacuum chamber cleaning maintenance and Care
as shown in the pictures below, Thin film material (mostly Metals) is being deposited on a daily basis onto the hardware parts present in our e-PVD vacuum chamber ( such as the quartz...
Hello,
a) Yes, the rise time is set to 2 min and soak time is set to1 min [ Ni and Pt]. Both have a point beam spot instead of x-y wobbling. the spot size can be changed if required. The spot type can also be changed to spiral, wobble and X- scan.
b) Yes the chamber is Opened after each...
Hope we have some PVD specialists in the house :)
we have a pfeiffer e-beam PVD in the lab which i use to deposit Ni and Pt thin films ( around 100nm each) on Si wafers. I have always had the problem of "Ni splashes" while heating the target ( with the e beam) which leads to a process stop (...