Of course CMP is the standard polishing technique, but I just wonder if it works for a thin film too.
On the other hand, I fear the machines I can access to are few.
I guess I have no ALD and perhaps no MBE.
Anyway those ideas must be written in a process flow in order to be allowed to do...
Do you believe that CMP can fit? It seems to be so rude... In fact my layers are designed to be thick around 250 nm. Did you suggest me that because you have experience in polishing?
So I can admit flatness variations not bigger than 100 nm, since the carrier wavelenght is in mid IR.
I don't...
Do you mean that MBE or CVD would let me grant a good thickness control?
Actually I could execute the LPCVD LTO - Low Pressure Chemical Vapor Deposition Low Temperature Oxide.
By the way, beside the thickness control, I need the interfaces to be really smooth and flat, (so that the conditions...
Hi there,
I need to fabricate a stack of layers (about 15 layers) on a 100 mm Si wafer <100> , by alternating SiO2 and Si. Each layer has been designed with a thickness of 200~800 nm plus/minus 50 nm.
At the moment I don't know the best technique for the deposition as I need to yield samples...
Hi everybody,
I need to deposit 50 nm of gold on a transparent oxide layer.
I need that this oxide layer would have a refractive index of 2, at the wavelenght 1.5 micron (infrared). I first tried with SiO2 but as many of you know the adhesion is very poor. Then I tried with ZrO2 and it...
I was told that the correct calculation is given by using as p_{ext}=const. Nevertheless, this constant is the external pressure corresponding to h_{2}! This is the incomprehensible enigma I'm stuck in!
I was taught that, in restrict relativity, quadrimpulse is introduced as a four-dimensional vector resulting on the generalization of common momentum vector which, on the contrary, is featured by tri-dimensions.
Its formal expression could be given as: \underline{p}\equiv...
In my opinion, the total energy and the quadrimpulse must conserve. We can use a reference frame system centered in the first particle and consider the target particle as coming toward the origin in relative motion...
The equation of state PV=nRT keeps always its validity, but the reversibility is not a prerequisite at all. If transformation takes place with rapidity, alas, your last sentence is not satisfactory anymore.
First of all, I suggest you to disregard the figure you referred to. It could only makes things more complicated than they really are. In atomic physics, emission/absorbtion spectra are experimentally obtained using lamps based on gases under low pressure. Low pressure allows to consider single...
Surely you'd be right if transformation could be thought as a reversible transformation (a nearly static one). I learned that heat exchange and work done by the system are not function of state and are strictly dependent upon the particular path the transformation has gone across.
I was just arrived to this same conclusion. But now, about work integral W=\integral_{V_{1}}^{V_{2}}p_{ext}dV, what is the correct expression I have to use for external pressure? I supposed it is a constant because of fast rising. But what's the value?