A Schottky barrier is a type of metal-semiconductor junction that blocks the flow of current in one direction. It is created by placing a metal contact onto a semiconductor material, creating a barrier that only allows electrons to flow in one direction from the metal to the semiconductor.
A Schottky barrier forms when a metal contact is placed on a semiconductor material. The metal and semiconductor have different work functions, creating an energy difference at the interface. This energy difference creates a barrier that prevents the flow of electrons in one direction.
The purpose of a Schottky barrier is to control the flow of electrons between a metal and a semiconductor. It is commonly used in electronic devices such as diodes and transistors to allow for the efficient transfer of electrons between the two materials.
A Schottky barrier is different from a p-n junction in that it is formed by a metal-semiconductor contact, while a p-n junction is formed by two different types of semiconductors. Additionally, a Schottky barrier only allows for one-directional flow of electrons, while a p-n junction allows for bi-directional flow.
Schottky barriers have a variety of applications in electronic devices, such as diodes, transistors, and solar cells. They are also used in sensors, microwave devices, and integrated circuits. They can also be used in energy conversion devices, such as thermionic converters and thermoelectric generators.