sahil_time said:The text dint provide a reason. But i was thinking that if V>Vb there will be no barrier hence the current will be too large and that might damage the device. Can this be the reason?
sahil_time said:We know that the built in potential barrier Vb does not allow any net current in a semiconductor. Now when we connect a battery in forward biased with the voltage V the current begins to flow even if V<Vb. Agreed. But my text says that V cannot exceed Vb is this true? for reference
http://books.google.co.in/books?id=...&resnum=6&ved=0CD0Q6AEwBQ#v=onepage&q&f=false
sahil_time said:yeah.yeah. so what do you propose?
Net current in a semiconductor refers to the overall flow of electric charge through the material. This includes both the flow of electrons (negative charge) and holes (positive charge).
Net current takes into account both the drift current (due to the movement of charge carriers under an electric field) and the diffusion current (due to the random movement of charge carriers). It is the sum of these two currents.
The net current in a semiconductor is affected by the applied electric field, the concentration of charge carriers, the mobility of the charge carriers, and the temperature of the material.
Net current can be measured using a device called a p-n junction diode, which allows for the separation of the diffusion and drift currents. Other methods include using a four-point probe or a Hall effect sensor.
The net current is a crucial factor in determining the functionality and efficiency of semiconductor devices. It affects the speed at which the device can operate and the amount of power it can handle. It is also used to calculate the resistance and conductance of the material.