I have deposition rate of Silicon dioxide as 1000A/minute. I need to calculate molecular flux to the surface. First I tried to use ideal gas theory but since SiO2 is not ideal gas therefore my answer was completely wrong. I am disoriented. Can anybody help. I know the answer is 3.8E15...
i have a general question that I need to know to apply for jobs. What do we mean by "semiconductor industry"? and where is most of the semiconductor industry located? I know Silicon valley but according to my survery most of the industry there is like google, youtube, facebook etc.
can you please give details of the steps you have taken to solve your problem. I am facing similar problem, I have n, k values and by using KK want to extrapolate to higher and especially lower energies.
thank
You are right but this is the way it is. I guess we need to make assumptions to reduce the number of variables. I tried AB=X and some other but it is not working. Fortunately I know it is solvable but I don't know how.
what is the difference between illuminant and source of light? What is the unit of illuminance and how can we calculate illuminance for IR light source?
is it possible the refractive index remains constant while its extinction co-efficient rises as function of frequency? if yes when does this typical arise? i imagine that this can happen at the absorption edge of transmission spectra of a semiconductor but i don't find any explanation to this.
Hi! I have samples of multiple thin films. Thin film of which refractive index needs to be estimated is sandwiched between substrate and capping layer of known refractive indices and extinction co-efficients. I have transmission and reflection spectra of the samples and with the help of these...
Can some one provide me a latex template for presenting a seminar. I have downloaded few templates but they require infinite numbers of .sty, .def etc. i try to download all of them but they never finish, also if someone can provide me latex poster template also.
thanks.
ellipsometry measures n, k and e1, e2 directly. however if you have reflectivity data from photospectrometer then you may use R=(n-1)^2+K^2/(n+1)^2+k^2, you will have to account for multiple reflections
say Al is evaporated in a vacuum chamber to form a thin film of AlN, say flow rate of N2 is 5sccm and deposition rate is 1 angstrom/s. then in 10minutes how thick film of AlN is formed? does in this case we need to consider voltage and current values (used to evaporate Al) also in order to...
gas flow rate has units of "sccm" that standard cubic centimeter per minute. what does "standard" means here? how is derived? if there is gas flow of 1 sccm then how much gas flows in cubic meters?
in michelson interferometer, does amplitude of of two waves is divided. i mean one wave say from fixed mirror has amplitue say A and the wave from moving mirror has amplitude say 0.8A? can we call this coherent source?