Recent content by Indula

I have given more details above about this experiment I did.

Thank you for your detailed explanation. You have noted that when the glow discharge occurs the voltage remains constant. I observed that when I tried to measure the voltage applied to the chamber using the following high voltage probe, the measured voltage seemed to be staying constant...

Okay. I'll try to describe it in more detail. The plasma that I'm trying to emulate here is Capacitively Coupled Plasma. This type of plasma is heavily used in microchip manufacturing to process the silicon wafers to deposit or etch the wafer to make intricate structures of electronics. The...

Yes. What I'm trying to do is to build a sensor array that would measure the plasma density of the plasma inside. So I have implemented a circular disk like plates inside the chamber and I'm measuring the current sensed by each plate. Here I'm using Argon gas and the gas pressure is about 500...

Yes there is a high electric field. About 15kV of sinosoidal voltage is applied. Frequency was about 23 kHz.

I have observed a layer like structure (made of plasma) in a cold plasma and wonders what causes it. Following image shows the observation.

Okay. Is there any thing that I need to take into account since it's a center tapped inductor ? Unlike 2 terminal inductors this one has 3 terminals due to center tap.

What's A_I value means ? Is it the core permeability value ?

I'm trying to drive a transformer using a ZVS power supply. The primary coil that we use here has to be wound center tapped. The output frequency depends on the inductance of the primary winding and capacitance used in the circuit. The circuit of a ZVS power supply is as follows, The...

jambaugh Thank you for your reply!

Hi jambaugh , Thank you very much for your answer. My experiment tries to build a sensor that can measure the plasma density inside a wafer processing chamber - Plasma Enhanced Chemical Wafer Processing(PECVD) chamber. The process use a cold plasma to deposit or etch the materials on a wafer to...

Is it the same as the plasma density ? Is it directly proportional to the plasma density ? Does this term only applies to electropositive plasma or applies to any plasma?

Summary: Is it the same as Bohm velocity ? Is it the same as Bohm velocity ?

I'm thinking of implementing a metal disk-like probe in an Argon plasma which is powered by RF. Therefore I need to know a metal that's least reactive with the plasma. Does molybdenum meets this requirement?